Discrete Semiconductor Products

STL31N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.135 OHM TYP., 15 A MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE

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DocumentsSTL31N65M5 | Datasheet AN4250 +17

Discrete Semiconductor Products

STL31N65M5

Active

STMicroelectronics

N-CHANNEL 650 V, 0.135 OHM TYP., 15 A MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE

Deep-Dive with AI

DocumentsSTL31N65M5 | Datasheet AN4250 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL31N65M5

Current - Continuous Drain (Id) @ 25°C	15 A, 2.8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1865 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	4-PowerVDFN
Power Dissipation (Max)	2.8 W, 125 W
Rds On (Max) @ Id, Vgs	162 mOhm
Supplier Device Package	PowerFlat™ (8x8) HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STL31N65M5 Series

N-channel 650 V, 0.135 Ohm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package

Part	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature
STMicroelectronics STL31N65M5	PowerFlat™ (8x8) HV	MOSFET (Metal Oxide)	162 mOhm	N-Channel	4-PowerVDFN	5 V	1865 pF	650 V	Surface Mount	10 V	45 nC	25 V	2.8 W 125 W	2.8 A 15 A	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2160	$ 3.12

Description

General part information

STL31N65M5 Series

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.