Discrete Semiconductor Products
PMPB06R7VPX
ActiveNexperia USA Inc.
MOSFETS 20 V, N-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
PMPB06R7VPX
ActiveNexperia USA Inc.
MOSFETS 20 V, N-CHANNEL TRENCH MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | PMPB06R7VPX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 3.7 W, 18 W |
| Rds On (Max) @ Id, Vgs [Max] | 8.8 mOhm |
| Supplier Device Package | DFN2020M-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PMPB06R7VP Series
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.