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12 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Technology | Supplier Device Package | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 46 nC | Surface Mount | MOSFET (Metal Oxide) | DFN2020M-6 | 6-UDFN Exposed Pad | P-Channel | 11 A | 1.5 V 4.5 V | 900 mV | 12 V | 8.8 mOhm | 150 °C | -55 °C | 2700 pF | 8 V | 3.7 W 18 W |