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PG-TO-220-FP
Discrete Semiconductor Products

IPA80R1K0CEXKSA1

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INFINEON

MOSFET N-CH 800V 3.6A TO220

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PG-TO-220-FP
Discrete Semiconductor Products

IPA80R1K0CEXKSA1

Unknown
INFINEON

MOSFET N-CH 800V 3.6A TO220

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPA80R1K0CEXKSA1
Current - Continuous Drain (Id) @ 25°C3.6 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds785 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)32 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackagePG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPA80R Series

N-Channel 800 V 3.6A (Tc) 32W (Tc) Through Hole PG-TO220-FP

Documents

Technical documentation and resources