Specification	CSD18503Q5AT

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	120 W, 3.1 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

CSD18503KCS Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD18503Q5AT	Surface Mount	100 A	2640 pF	4.5 V 10 V	2.3 V	-55 °C	150 °C	N-Channel	8-PowerTDFN	20 V	8-VSONP (5x6)	4.3 mOhm	16 nC	MOSFET (Metal Oxide)	3.1 W 120 W	40 V
Texas Instruments CSD18503KCS	Through Hole	100 A		4.5 V 10 V	2.3 V	-55 °C	150 °C	N-Channel	TO-220-3	20 V	TO-220-3	4.5 mOhm		MOSFET (Metal Oxide)	188 W	40 V	36 nC	3150 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 40 V, 3.4 mΩ, 5 × 6 mm SON NexFET power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources