CSD18503KCS Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD18503Q5AT	Surface Mount	100 A	2640 pF	4.5 V 10 V	2.3 V	-55 °C	150 °C	N-Channel	8-PowerTDFN	20 V	8-VSONP (5x6)	4.3 mOhm	16 nC	MOSFET (Metal Oxide)	3.1 W 120 W	40 V
Texas Instruments CSD18503KCS	Through Hole	100 A		4.5 V 10 V	2.3 V	-55 °C	150 °C	N-Channel	TO-220-3	20 V	TO-220-3	4.5 mOhm		MOSFET (Metal Oxide)	188 W	40 V	36 nC	3150 pF

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLogic LevelPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLogic LevelPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic Package

Description

This 40 V, 3.4 mΩ, 5 × 6 mm SON NexFET power MOSFET is designed to minimize losses in power conversion applications. This 40 V, 3.4 mΩ, 5 × 6 mm SON NexFET power MOSFET is designed to minimize losses in power conversion applications.