Discrete Semiconductor Products

2SK3566(STA4,Q,M)

LTB

TRANS MOSFET N-CH SI 900V 2.5A 3-PIN(3+TAB) TO-220SIS

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Discrete Semiconductor Products

LTB

TRANS MOSFET N-CH SI 900V 2.5A 3-PIN(3+TAB) TO-220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3566(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	470 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	6.4 Ohm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology
Toshiba Semiconductor and Storage 2SK3566(STA4,Q,M)	10 V	6.4 Ohm	150 °C	Through Hole	TO-220-3 Full Pack	12 nC	30 V	TO-220SIS	N-Channel	900 V	470 pF	2.5 A	40 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 2.5A (Ta) 40W (Tc) Through Hole TO-220SIS

Technical documentation and resources