Zenode.ai Logo
Beta
TO-220-3
Discrete Semiconductor Products

IPP065N04N G

Obsolete
INFINEON

MOSFET N-CH 40V 50A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TO-220-3
Discrete Semiconductor Products

IPP065N04N G

Obsolete
INFINEON

MOSFET N-CH 40V 50A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP065N04N G
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]34 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)68 W
Rds On (Max) @ Id, Vgs6.5 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPP065N Series

N-Channel 40 V 50A (Tc) 68W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources