Discrete Semiconductor Products

IPP065N03LGXKSA1

Obsolete

MOSFET N-CH 30V 50A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 50A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP065N03LGXKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	56 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPP065N04N G	20 V	34 nC	N-Channel	68 W	6.5 mOhm	175 °C	-55 °C	10 V	PG-TO220-3	TO-220-3	2800 pF	4 V	50 A	40 V	MOSFET (Metal Oxide)	Through Hole
INFINEON IPP065N06LGAKSA1	20 V	157 nC	N-Channel	250 W	6.5 mOhm	175 °C	-55 °C	4.5 V 10 V	PG-TO220-3-1	TO-220-3		2 V		60 V	MOSFET (Metal Oxide)	Through Hole	5100 pF
INFINEON IPP065N03LGXKSA1	20 V		N-Channel		6.5 mOhm	175 °C	-55 °C	4.5 V 10 V	PG-TO220-3-1	TO-220-3	2400 pF	2.2 V	50 A	30 V	MOSFET (Metal Oxide)	Through Hole		56 W	23 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 50A (Tc) 56W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available