Specification	BUK9K89-100E,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	12.5 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	16.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1108 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1205, 8-LFPAK56
Power - Max [Max]	38 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

BUK9K89-100E Series

Dual N-channel TrenchMOS logic level FET

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Mounting Type	Grade	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	FET Feature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology
Nexperia USA Inc. BUK9K89-100E,115	12.5 A	8-LFPAK56 SOT-1205	1108 pF	AEC-Q101	Surface Mount	Automotive	85 mOhm	175 °C	-55 °C	38 W	2.1 V	2 N-Channel (Dual)	LFPAK56D	Logic Level Gate	100 V	16.8 nC	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.09

Description

General part information

BUK9K89-100E Series

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.