BUK9K89-100E Series

Dual N-channel TrenchMOS logic level FET

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Dual N-channel TrenchMOS logic level FET

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Mounting Type	Grade	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	FET Feature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology
Nexperia USA Inc. BUK9K89-100E,115	12.5 A	8-LFPAK56 SOT-1205	1108 pF	AEC-Q101	Surface Mount	Automotive	85 mOhm	175 °C	-55 °C	38 W	2.1 V	2 N-Channel (Dual)	LFPAK56D	Logic Level Gate	100 V	16.8 nC	MOSFET (Metal Oxide)

Catalog

Dual N-channel TrenchMOS logic level FET

Description

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.