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ONSEMI FDMC6675BZ
Discrete Semiconductor Products

FDMC6675BZ

NRND
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 20 A, 0.0107 OHM, MLP, SURFACE MOUNT

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ONSEMI FDMC6675BZ
Discrete Semiconductor Products

FDMC6675BZ

NRND
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 20 A, 0.0107 OHM, MLP, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC6675BZ
Current - Continuous Drain (Id) @ 25°C9.5 A, 20 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]65 nC
Input Capacitance (Ciss) (Max) @ Vds2865 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)36 W, 2.3 W
Rds On (Max) @ Id, Vgs14.4 mOhm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.16
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Digi-Reel® 1$ 1.16
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Tape & Reel (TR) 3000$ 0.48
6000$ 0.46
9000$ 0.44
NewarkEach (Supplied on Cut Tape) 250$ 0.66
ON SemiconductorN/A 1$ 0.40

Description

General part information

FDMC6675BZ Series

This part number is not recommended for new designs. Please apply NTTFS015P03P8ZTAG as a replacement. The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on)and ESD protection.