Discrete Semiconductor Products

PMZB550UNEYL

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POWER MOSFET, N CHANNEL, 30 V, 590 MA, 0.55 OHM, SOT-883B, SURFACE MOUNT

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Documentsplastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body LFPAK MOSFET thermal design guide - Part 2 +12

Discrete Semiconductor Products

PMZB550UNEYL

Active

Nexperia USA Inc.

POWER MOSFET, N CHANNEL, 30 V, 590 MA, 0.55 OHM, SOT-883B, SURFACE MOUNT

Deep-Dive with AI

Documentsplastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body LFPAK MOSFET thermal design guide - Part 2 +12

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB550UNEYL

Current - Continuous Drain (Id) @ 25°C	590 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	30.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	310 mW
Power Dissipation (Max)	1.67 W
Rds On (Max) @ Id, Vgs [Max]	670 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMZB550 Series

30 V, N-channel Trench MOSFET

Part	FET Type	Vgs (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case
Nexperia USA Inc. PMZB550UNEYL	N-Channel	8 V	150 °C	-55 °C	590 mA	Surface Mount	DFN1006B-3	950 mV	310 mW	1.67 W	MOSFET (Metal Oxide)	30 V	670 mOhm	1.5 V 4.5 V	30.3 pF	1.1 nC	3-XFDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.36
		10	$ 0.22
		100	$ 0.14
		500	$ 0.10
		1000	$ 0.09
		2000	$ 0.08
		5000	$ 0.07
	Digi-Reel®	1	$ 0.36
		10	$ 0.22
		100	$ 0.14
		500	$ 0.10
		1000	$ 0.09
		2000	$ 0.08
		5000	$ 0.07
	N/A	5272	$ 0.46
	Tape & Reel (TR)	10000	$ 0.06
		20000	$ 0.06
		30000	$ 0.05
		50000	$ 0.05
		70000	$ 0.05
		100000	$ 0.05

Description

General part information

PMZB550 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources

plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body

Marcom graphics

plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body

Package information

PMZB550UNEYL

Deep-Dive with AI

PMZB550UNEYL

Deep-Dive with AI

Technical Specifications

PMZB550 Series

Pricing

Description

PMZB550 Series

Documents

plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body

LFPAK MOSFET thermal design guide - Part 2

Power MOSFET frequently asked questions and answers

30 V, N-channel Trench MOSFET

RC Thermal Models

Thermal performance of DFN packages

Level shifting techniques in I2C-bus design

DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientation

Using power MOSFETs in parallel

Reflow soldering profile

Nexperia package poster

LFPAK MOSFET thermal design guide, Chinese version

Questions about package outline drawings

plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body

PMZB550 Series