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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | FET Type | Vgs (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 8 V | 150 °C | -55 °C | 590 mA | Surface Mount | DFN1006B-3 | 950 mV | 310 mW | 1.67 W | MOSFET (Metal Oxide) | 30 V | 670 mOhm | 1.5 V 4.5 V | 30.3 pF | 1.1 nC | 3-XFDFN |