Specification	PHPT60406PY-QX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	210
Frequency - Transition	110 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.35 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	540 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PHPT60406PY-Q Series

40 V, 6 A PNP high power bipolar transistor

Part	Frequency - Transition	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Mounting Type	Power - Max [Max]	Qualification	Grade	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Nexperia USA Inc. PHPT60406PY-QX	110 MHz	LFPAK56 Power-SO8	SC-100 SOT-669	100 nA	40 V	175 °C	Surface Mount	1.35 W	AEC-Q101	Automotive	540 mV	210	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.29

General part information

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources