Catalog
40 V, 6 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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40 V, 6 A PNP high power bipolar transistor
40 V, 6 A PNP high power bipolar transistor
| Part | Frequency - Transition | Supplier Device Package | Package / Case | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Mounting Type | Power - Max [Max] | Qualification | Grade | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 110 MHz | LFPAK56 Power-SO8 | SC-100 SOT-669 | 100 nA | 40 V | 175 °C | Surface Mount | 1.35 W | AEC-Q101 | Automotive | 540 mV | 210 | PNP |