Discrete Semiconductor Products
BUK7Y3R1-80MX
ActiveNexperia USA Inc.
N-CHANNEL 80 V, 3.1 MOHM, STANDARD LEVEL MOSFET IN LFPAK56
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Discrete Semiconductor Products
BUK7Y3R1-80MX
ActiveNexperia USA Inc.
N-CHANNEL 80 V, 3.1 MOHM, STANDARD LEVEL MOSFET IN LFPAK56
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK7Y3R1-80MX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 160 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 108 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 6986 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) | 300 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 468 | $ 3.34 | |
Description
General part information
BUK7Y3R1-80M Series
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSoncapability, housed in a LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Documents
Technical documentation and resources