BUK7Y3R1-80M Series

N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56

Catalog

N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Qualification	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds
Nexperia USA Inc. BUK7Y3R1-80MX	3.1 mOhm	10 V	SC-100 SOT-669	LFPAK56 Power-SO8	20 V	Automotive	108 nC	Surface Mount	AEC-Q101	N-Channel	175 °C	-55 °C	300 W	80 V	160 A	MOSFET (Metal Oxide)	6986 pF

Catalog

N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56

Description

Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSoncapability, housed in a LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.