Discrete Semiconductor Products

IPP80P03P405AKSA1

Obsolete

MOSFET P-CH 30V 80A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80P03P405AKSA1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	10300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	137 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Grade	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]
INFINEON IPP80P03P405AKSA1	AEC-Q101	175 °C	-55 °C	30 V	10300 pF	TO-220-3	137 W	Through Hole	MOSFET (Metal Oxide)	4 V	130 nC	10 V	20 V	Automotive	P-Channel	5 mOhm	PG-TO220-3-1
INFINEON IPP80P04P4L06AKSA1	AEC-Q101	175 °C	-55 °C	40 V	6580 pF	TO-220-3	88 W	Through Hole	MOSFET (Metal Oxide)	2.2 V		4.5 V 10 V		Automotive	P-Channel	6.7 mOhm	PG-TO220-3-1	104 nC	5 V	-16 V
INFINEON IPP80P03P4L07AKSA1	AEC-Q101	175 °C	-55 °C	30 V	5700 pF	TO-220-3	88 W	Through Hole	MOSFET (Metal Oxide)	2 V	80 nC	4.5 V 10 V		Automotive	P-Channel	7.2 mOhm	PG-TO220-3-1		5 V	-16 V
INFINEON IPP80P04P4L08AKSA1	AEC-Q101	175 °C	-55 °C	40 V	5430 pF	TO-220-3	75 W	Through Hole	MOSFET (Metal Oxide)	2.2 V		4.5 V 10 V		Automotive	P-Channel	8.2 mOhm	PG-TO220-3-1	92 nC	5 V	-16 V
INFINEON IPP80P04P405AKSA1	AEC-Q101	175 °C	-55 °C	40 V	10300 pF	TO-220-3	125 W	Through Hole	MOSFET (Metal Oxide)	4 V	151 nC	10 V	20 V	Automotive	P-Channel	5.2 mOhm	PG-TO220-3-1
INFINEON IPP80P04P4L04AKSA1	AEC-Q101	175 °C	-55 °C	40 V	3800 pF	TO-220-3	125 W	Through Hole	MOSFET (Metal Oxide)	2.2 V	176 nC	4.5 V 10 V		Automotive	P-Channel	4.7 mOhm	PG-TO220-3-1		5 V	-16 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 30 V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources