IPP80P Series

Manufacturer: INFINEON

Catalog

MOSFET P-CH 30V 80A TO220-3

Part	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Grade	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]
INFINEON IPP80P03P405AKSA1	AEC-Q101	175 °C	-55 °C	30 V	10300 pF	TO-220-3	137 W	Through Hole	MOSFET (Metal Oxide)	4 V	130 nC	10 V	20 V	Automotive	P-Channel	5 mOhm	PG-TO220-3-1
INFINEON IPP80P04P4L06AKSA1	AEC-Q101	175 °C	-55 °C	40 V	6580 pF	TO-220-3	88 W	Through Hole	MOSFET (Metal Oxide)	2.2 V		4.5 V 10 V		Automotive	P-Channel	6.7 mOhm	PG-TO220-3-1	104 nC	5 V	-16 V
INFINEON IPP80P03P4L07AKSA1	AEC-Q101	175 °C	-55 °C	30 V	5700 pF	TO-220-3	88 W	Through Hole	MOSFET (Metal Oxide)	2 V	80 nC	4.5 V 10 V		Automotive	P-Channel	7.2 mOhm	PG-TO220-3-1		5 V	-16 V
INFINEON IPP80P04P4L08AKSA1	AEC-Q101	175 °C	-55 °C	40 V	5430 pF	TO-220-3	75 W	Through Hole	MOSFET (Metal Oxide)	2.2 V		4.5 V 10 V		Automotive	P-Channel	8.2 mOhm	PG-TO220-3-1	92 nC	5 V	-16 V
INFINEON IPP80P04P405AKSA1	AEC-Q101	175 °C	-55 °C	40 V	10300 pF	TO-220-3	125 W	Through Hole	MOSFET (Metal Oxide)	4 V	151 nC	10 V	20 V	Automotive	P-Channel	5.2 mOhm	PG-TO220-3-1
INFINEON IPP80P04P4L04AKSA1	AEC-Q101	175 °C	-55 °C	40 V	3800 pF	TO-220-3	125 W	Through Hole	MOSFET (Metal Oxide)	2.2 V	176 nC	4.5 V 10 V		Automotive	P-Channel	4.7 mOhm	PG-TO220-3-1		5 V	-16 V