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CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null
Discrete Semiconductor Products

FF6MR12W2M1PB11BPSA1

Obsolete
INFINEON

SILICON CARBIDE POWER MOSFET

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CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null
Discrete Semiconductor Products

FF6MR12W2M1PB11BPSA1

Obsolete
INFINEON

SILICON CARBIDE POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFF6MR12W2M1PB11BPSA1
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C200 A
Drain to Source Voltage (Vdss)1.2 kV
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds [Max]14700 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Rds On (Max) @ Id, Vgs [Max]5.63 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 298.00
5$ 264.00
DigikeyN/A 0$ 0.00

Description

General part information

FF6MR12 Series

Mosfet Array 1200V (1.2kV) 200A (Tj) Chassis Mount

Documents

Technical documentation and resources

No documents available