Specification	BSS84AK,215

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	350 mW, 1.14 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 Ohm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

BSS84AK Series

50 V, 180 mA P-channel Trench MOSFET

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade	FET Type	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. BSS84AK,215	SC-59 SOT-23-3 TO-236-3	36 pF	MOSFET (Metal Oxide)	10 V	7.5 Ohm	Surface Mount	50 V	180 mA	2.1 V	0.35 nC	AEC-Q101	Automotive	P-Channel	1.14 W 350 mW	20 V	TO-236AB	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.25

Description

General part information

BSS84AK Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.