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50 V, 180 mA P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, 180 mA P-channel Trench MOSFET
50 V, 180 mA P-channel Trench MOSFET
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Grade | FET Type | Power Dissipation (Max) | Vgs (Max) | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 36 pF | MOSFET (Metal Oxide) | 10 V | 7.5 Ohm | Surface Mount | 50 V | 180 mA | 2.1 V | 0.35 nC | AEC-Q101 | Automotive | P-Channel | 1.14 W 350 mW | 20 V | TO-236AB | 150 °C | -55 °C |