NGW75T65H3DFQ
ActiveIGBT WITH TRENCH CONSTRUCTION, FAST RECOVERY DIODE
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NGW75T65H3DFQ
ActiveIGBT WITH TRENCH CONSTRUCTION, FAST RECOVERY DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGW75T65H3DFQ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 160 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 600 W |
| Reverse Recovery Time (trr) | 165 ns |
| Supplier Device Package | TO-247-3L |
| Switching Energy | 2.9 mJ, 1.1 mJ |
| Td (on/off) @ 25°C | 29 ns, 170 ns |
| Test Condition | 10 Ohm, 400 V, 75 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 450 | $ 8.61 | |
Description
General part information
NGW75T65H3DF Series
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Documents
Technical documentation and resources