Specification	SSM6P69NU,LF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6.74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	480 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

SSM6P69NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -4.0 A, 0.045 Ω@10V, SOT-1118(UDFN6)

Part	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Feature	FET Feature	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Mounting Type	Technology
Toshiba Semiconductor and Storage SSM6P69NU,LF	1 W	6-µDFN (2x2)	6.74 nC	1.8 V	Logic Level Gate	45 mOhm	2 P-Channel (Dual)	1.2 V	4 A	20 V	480 pF	150 °C	Surface Mount	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	32978	$ 0.68

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -4.0 A, 0.045 Ω@10V, SOT-1118(UDFN6)

Technical documentation and resources