High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -4.0 A, 0.045 Ω@10V, SOT-1118(UDFN6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -4.0 A, 0.045 Ω@10V, SOT-1118(UDFN6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -4.0 A, 0.045 Ω@10V, SOT-1118(UDFN6)
| Part | Power - Max [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | FET Feature | FET Feature | Rds On (Max) @ Id, Vgs | Configuration | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 W | 6-µDFN (2x2) | 6.74 nC | 1.8 V | Logic Level Gate | 45 mOhm | 2 P-Channel (Dual) | 1.2 V | 4 A | 20 V | 480 pF | 150 °C | Surface Mount | MOSFET (Metal Oxide) |