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Technical Specifications
Parameters and characteristics for this part
| Specification | BSH205G2AR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 421 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 610 mW, 10 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 118 mOhm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.48 | |
Description
General part information
BSH205G2A Series
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources