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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Qualification | Power Dissipation (Max) | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 175 °C | -55 °C | 2.6 A | 900 mV | MOSFET (Metal Oxide) | AEC-Q101 | 10 W 610 mW | Automotive | 421 pF | 118 mOhm | SC-59 SOT-23-3 TO-236-3 | Surface Mount | P-Channel | 7 nC | TO-236AB | 8 V | 20 V |