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Technical Specifications
Parameters and characteristics for this part
| Specification | JANS2N6989U |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 800 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Grade | Military |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, No Lead |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/559 |
| Supplier Device Package | 6-SMD |
| Transistor Type | 4 PNP (Quad) |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 262.27 | |
Description
General part information
JANTXV2N6989U-Quad-Transistor Series
This specification covers the performance requirements for NPN, silicon, switching, 2N6989 and 2N6990 Unitized transistors in a four independent 2N2222A transistor chip array. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/559. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources
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