Specification	PMPB55XNEAX

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max) [Max]	550 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

PMPB55XNEA Series

30 V, N-channel Trench MOSFET

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Supplier Device Package
Nexperia USA Inc. PMPB55XNEAX	MOSFET (Metal Oxide)	3.8 A	72 mOhm	1.25 V	Automotive	175 °C	-55 °C	6-UDFN Exposed Pad	2.5 V	4.5 V	N-Channel	12 V	Surface Mount	30 V	AEC-Q101	5 nC	550 mW	DFN2020MD-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.87

Description

General part information

PMPB55XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.