Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Grade | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | FET Type | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | 3.8 A | 72 mOhm | 1.25 V | Automotive | 175 °C | -55 °C | 6-UDFN Exposed Pad | 2.5 V | 4.5 V | N-Channel | 12 V | Surface Mount | 30 V | AEC-Q101 | 5 nC | 550 mW | DFN2020MD-6 |