Discrete Semiconductor Products

PBSS4230PAN,115

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30 V, 2 A NPN/NPN LOW VCESAT TRANSISTOR

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DocumentsPBSS4230PAN,115 | Datasheet plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body +6

Discrete Semiconductor Products

PBSS4230PAN,115

Active

Nexperia USA Inc.

30 V, 2 A NPN/NPN LOW VCESAT TRANSISTOR

Deep-Dive with AI

DocumentsPBSS4230PAN,115 | Datasheet plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body +6

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4230PAN,115

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	120 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q100
Supplier Device Package	6-HUSON (2x2)
Vce Saturation (Max) @ Ib, Ic	290 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PBSS4230PAN Series

30 V, 2 A NPN/NPN low VCEsat transistor

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Mounting Type	Operating Temperature	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Qualification
Nexperia USA Inc. PBSS4230PAN,115	290 mV	6-HUSON (2x2)	120 MHz	30 V	Automotive	Surface Mount	150 °C	6-UFDFN Exposed Pad	510 mW	100 nA	200	2 A	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2970	$ 1.08

Description

General part information

PBSS4230PAN Series

NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.