Catalog
30 V, 2 A NPN/NPN low VCEsat transistor
Description
AI
NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
30 V, 2 A NPN/NPN low VCEsat transistor
30 V, 2 A NPN/NPN low VCEsat transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Grade | Mounting Type | Operating Temperature | Package / Case | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 290 mV | 6-HUSON (2x2) | 120 MHz | 30 V | Automotive | Surface Mount | 150 °C | 6-UFDFN Exposed Pad | 510 mW | 100 nA | 200 | 2 A | AEC-Q100 |