Discrete Semiconductor Products

RN1902,LF(CT

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TRANS DIGITAL BJT NPN 50V 0.1A 200MW 6-PIN US T/R AUTOMOTIVE AEC-Q101

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Discrete Semiconductor Products

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TRANS DIGITAL BJT NPN 50V 0.1A 200MW 6-PIN US T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	RN1902,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	US6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)

Part	Resistor - Emitter Base (R2)	Qualification	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition
Toshiba Semiconductor and Storage RN1902,LXHF(CT	10 kOhms	AEC-Q101	Surface Mount	300 mV	100 mA	Automotive	50 V	200 mW	US6	2 NPN - Pre-Biased (Dual)	500 nA	50	6-TSSOP SC-88 SOT-363	250 MHz
Toshiba Semiconductor and Storage RN1902,LF(CT	10 kOhms		Surface Mount	300 mV	100 mA		50 V	200 mW	US6	2 NPN - Pre-Biased (Dual)	500 nA	50	6-TSSOP SC-88 SOT-363	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)

Technical documentation and resources