Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)
| Part | Resistor - Emitter Base (R2) | Qualification | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Grade | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Supplier Device Package | Transistor Type | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 10 kOhms | AEC-Q101 | Surface Mount | 300 mV | 100 mA | Automotive | 50 V | 200 mW | US6 | 2 NPN - Pre-Biased (Dual) | 500 nA | 50 | 6-TSSOP SC-88 SOT-363 | 250 MHz |
 Toshiba Semiconductor and Storage | 10 kOhms | Surface Mount | 300 mV | 100 mA | 50 V | 200 mW | US6 | 2 NPN - Pre-Biased (Dual) | 500 nA | 50 | 6-TSSOP SC-88 SOT-363 | 250 MHz |