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R1LV0216BSB-5SI#B1
Integrated Circuits (ICs)

R1LV0216BSB-5SI#B1

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Renesas Electronics Corporation

SRAM SRAM 2MB ADV. 3V TSOP44 55NS -40TO85C

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R1LV0216BSB-5SI#B1
Integrated Circuits (ICs)

R1LV0216BSB-5SI#B1

Active
Renesas Electronics Corporation

SRAM SRAM 2MB ADV. 3V TSOP44 55NS -40TO85C

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationR1LV0216BSB-5SI#B1
Access Time55 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization [custom]128 K
Memory Size2 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Package / Case44-TSOP (0.400", 10.16mm Width)
Supplier Device Package44-TSOP II
TechnologySRAM
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page55 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 160$ 2.87
MouserN/A 1$ 2.73
10$ 2.56
25$ 2.43
100$ 2.35
270$ 2.28
540$ 2.22
1080$ 2.17
2565$ 2.16
5130$ 2.09

Description

General part information

R1LV0216BSB Series

The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131, 072-word by 16-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density, higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has been packaged in 44-pin TSOP.

Documents

Technical documentation and resources