R1LV0216BSB-7SI Series

2Mb Advanced LPSRAM (128k word x 16bit)

Manufacturer: Renesas Electronics Corporation

Catalog

2Mb Advanced LPSRAM (128k word x 16bit)

Part	Memory Type	Memory Size	Memory Interface	Memory Format	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Supplier Device Package	Mounting Type	Package / Case	Package / Case	Package / Case	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Renesas Electronics Corporation R1LV0216BSB-5SI#B0	Volatile	2 Gbit	Parallel	SRAM	SRAM	85 °C	-40 °C	55 ns	44-TSOP II	Surface Mount	10.16 mm	10.16 mm	44-TSOP	2.7 V	3.6 V	55 ns	55 ns
Renesas Electronics Corporation R1LV0216BSB-5SI#S1	Volatile	2 Gbit	Parallel	SRAM	SRAM	85 °C	-40 °C	55 ns	44-TSOP II	Surface Mount	10.16 mm	10.16 mm	44-TSOP	2.7 V	3.6 V	55 ns	55 ns
Renesas Electronics Corporation R1LV0216BSB-7SI#B0	Volatile	2 Gbit	Parallel	SRAM	SRAM	85 °C	-40 °C	70 ns	44-TSOP II	Surface Mount	10.16 mm	10.16 mm	44-TSOP	2.7 V	3.6 V

Catalog

2Mb Advanced LPSRAM (128k word x 16bit)

Description

The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131, 072-word by 16-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density, higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has been packaged in 44-pin TSOP.