Discrete Semiconductor Products

CMS100N04H8-HF

Obsolete

MOSFET N-CH 40V 100A DFN5X6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 100A DFN5X6

Technical Specifications

Parameters and characteristics for this part

Specification	CMS100N04H8-HF

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2 W, 135 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	DFN5x6 (PR-PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Comchip Technology CMS100N04H8-HF	4940 pF	8-PowerTDFN	40 V	20 V	150 °C	-55 °C	100 A	2 W 135 W	44.4 nC	MOSFET (Metal Oxide)	DFN5x6 (PR-PAK)	N-Channel	2.8 mOhm	2.5 V	Surface Mount
Comchip Technology CMS100N03H8-HF		8-PowerTDFN	30 V	20 V	150 °C	-55 °C	100 A	3.6 W 83 W	82 nC	MOSFET (Metal Oxide)	DFN5x6 (PR-PAK)	N-Channel	1.8 mOhm	2.5 V	Surface Mount	4222 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.68

General part information

N-Channel 40 V 100A (Tc) 2W (Ta), 135W (Tc) Surface Mount DFN5x6 (PR-PAK)

Technical documentation and resources