CMS100N03H8-HF

Obsolete

MOSFET N-CH 30V 100A DFN5X6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 100A DFN5X6

Technical Specifications

Parameters and characteristics for this part

Specification	CMS100N03H8-HF

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	82 nC
Input Capacitance (Ciss) (Max) @ Vds	4222 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.6 W, 83 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	PR-PAK
Supplier Device Package	DFN5x6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Comchip Technology CMS100N04H8-HF	N-Channel	Surface Mount	4940 pF	2.8 mOhm	8-PowerTDFN	PR-PAK	DFN5x6	MOSFET (Metal Oxide)	40 V	44.4 nC	100 A	20 V	-55 °C	150 °C	2.5 V	2 W 135 W
Comchip Technology CMS100N03H8-HF	N-Channel	Surface Mount	4222 pF	1.8 mOhm	8-PowerTDFN	PR-PAK	DFN5x6	MOSFET (Metal Oxide)	30 V		100 A	20 V	-55 °C	150 °C	2.5 V	3.6 W 83 W	82 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 100A (Tc) 3.6W (Ta), 83W (Tc) Surface Mount DFN5x6 (PR-PAK)

Technical documentation and resources

No documents available