Discrete Semiconductor Products

IRFR120PBF-BE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 7.7A DPAK

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Discrete Semiconductor Products

IRFR120PBF-BE3

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 7.7A DPAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR120PBF-BE3

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFR120 Series

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFR120TRRPBF-BE3	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	TO-252AA	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR120TR	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120TRR	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120PBF-BE3	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	TO-252AA	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR120TRPBF-BE3	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	TO-252AA	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120PBF	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120TRL	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120TRPBF	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.83
		75	$ 0.67
		150	$ 0.53
		525	$ 0.45
		1050	$ 0.44

Description

General part information

IRFR120 Series

N-Channel 100 V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources