IRFR120 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 100V 7.7A DPAK

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFR120TRRPBF-BE3	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	TO-252AA	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR120TR	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120TRR	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120PBF-BE3	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	TO-252AA	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR120TRPBF-BE3	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	TO-252AA	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120PBF	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120TRL	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V
Vishay General Semiconductor - Diodes Division IRFR120TRPBF	7.7 A	2.5 W 42 W	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	DPAK	360 pF	100 V	16 nC	20 V	Surface Mount	N-Channel	4 V	MOSFET (Metal Oxide)	10 V