Discrete Semiconductor Products

SI3477DV-T1-GE3

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MOSFET P-CH 12V 8A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET P-CH 12V 8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3477DV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	2 W, 4.2 W
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Vishay General Semiconductor - Diodes Division SI3477DV-T1-GE3	10 V	Surface Mount	2 W 4.2 W	6-TSOP	MOSFET (Metal Oxide)	P-Channel	2600 pF	90 nC	17.5 mOhm	12 V	-55 °C	150 °C	1 V	8 A	1.8 V 4.5 V	SOT-23-6 Thin TSOT-23-6

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General part information

P-Channel 12 V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Technical documentation and resources