SI3477 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 8A 6TSOP
| Part | Vgs (Max) | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 2 W 4.2 W | 6-TSOP | MOSFET (Metal Oxide) | P-Channel | 2600 pF | 90 nC | 17.5 mOhm | 12 V | -55 °C | 150 °C | 1 V | 8 A | 1.8 V 4.5 V | SOT-23-6 Thin TSOT-23-6 |