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STWA57N65M5
Discrete Semiconductor Products

STWA57N65M5

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STMicroelectronics

N-CHANNEL 650 V, 56 MOHM TYP., 42 A MDMESH M5 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA57N65M5
Discrete Semiconductor Products

STWA57N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 56 MOHM TYP., 42 A MDMESH M5 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA57N65M5
Current - Continuous Drain (Id) @ 25°C42 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]98 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4200 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs [Max]63 mOhm
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 90$ 9.82

Description

General part information

STWA57N65M5 Series

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.

Documents

Technical documentation and resources