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Mill-Max-316-93-133-61-001000 Connector Headers and PCB Receptacles Conn Socket Strip SKT 33 POS 2.54mm Solder ST Thru-Hole
Integrated Circuits (ICs)

DS1245Y-120+

Active
Analog Devices Inc./Maxim Integrated

NVRAM NVSRAM PARALLEL 1MBIT 5V 32-PIN EDIP TUBE

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Mill-Max-316-93-133-61-001000 Connector Headers and PCB Receptacles Conn Socket Strip SKT 33 POS 2.54mm Solder ST Thru-Hole
Integrated Circuits (ICs)

DS1245Y-120+

Active
Analog Devices Inc./Maxim Integrated

NVRAM NVSRAM PARALLEL 1MBIT 5V 32-PIN EDIP TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationDS1245Y-120+
Access Time120 ns
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization128 K
Memory Size1 Mbit
Memory TypeNon-Volatile
Mounting TypeThrough Hole
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case32-DIP Module
Package / Case15.24 mm
Package / Case0.6 in
Supplier Device Package32-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V
Write Cycle Time - Word, Page120 ns

DS1245Y Series

1024k Nonvolatile SRAM

PartMemory InterfacePackage / CaseMemory SizeSupplier Device PackageMemory OrganizationTechnologyMemory FormatWrite Cycle Time - Word, Page [y]Write Cycle Time - Word, Page [x]Voltage - Supply [Max]Voltage - Supply [Min]Operating Temperature [Min]Operating Temperature [Max]Access TimeMemory TypeMounting TypeWrite Cycle Time - Word, PagePackage / CasePackage / Case
34-PCM
Analog Devices Inc./Maxim Integrated
Parallel
34-PowerCap™ Module
1 Mbit
34-PowerCap Module
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
100 ns
100 ns
5.5 V
4.5 V
0 °C
70 °C
100 ns
Non-Volatile
Surface Mount
DS1245YL-70
Analog Devices Inc./Maxim Integrated
Parallel
1 Mbit
34-LPM
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
0 °C
70 °C
70 ns
Non-Volatile
Surface Mount
70 ns
32-EDIP
Analog Devices Inc./Maxim Integrated
Parallel
32-DIP Module
1 Mbit
32-EDIP
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
0 °C
70 °C
70 ns
Non-Volatile
Through Hole
70 ns
15.24 mm
0.6 in
Mill-Max-316-93-133-61-001000 Connector Headers and PCB Receptacles Conn Socket Strip SKT 33 POS 2.54mm Solder ST Thru-Hole
Analog Devices Inc./Maxim Integrated
Parallel
32-DIP Module
1 Mbit
32-EDIP
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
0 °C
70 °C
120 ns
Non-Volatile
Through Hole
120 ns
15.24 mm
0.6 in
32-EDIP
Analog Devices Inc./Maxim Integrated
Parallel
32-DIP Module
1 Mbit
32-EDIP
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
-40 ¯C
85 C
120 ns
Non-Volatile
Through Hole
120 ns
15.24 mm
0.6 in
Analog Devices-DS1245Y-70IND+ NVRAM NVRAM NVSRAM Parallel 1Mbit 5V 32-Pin EDIP Tube
Analog Devices Inc./Maxim Integrated
Parallel
32-DIP Module
1 Mbit
32-EDIP
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
0 °C
70 °C
70 ns
Non-Volatile
Through Hole
70 ns
15.24 mm
0.6 in
32-EDIP
Analog Devices Inc./Maxim Integrated
Parallel
32-DIP Module
1 Mbit
32-EDIP
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
-40 ¯C
85 C
70 ns
Non-Volatile
Through Hole
70 ns
15.24 mm
0.6 in
32-EDIP
Analog Devices Inc./Maxim Integrated
Parallel
32-DIP Module
1 Mbit
32-EDIP
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
-40 ¯C
85 C
70 ns
Non-Volatile
Through Hole
70 ns
15.24 mm
0.6 in
34-PCM
Analog Devices Inc./Maxim Integrated
Parallel
34-PowerCap™ Module
1 Mbit
34-PowerCap Module
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
100 ns
100 ns
5.5 V
4.5 V
0 °C
70 °C
100 ns
Non-Volatile
Surface Mount
DS1245YL-70IND
Analog Devices Inc./Maxim Integrated
Parallel
1 Mbit
34-LPM
128 K
NVSRAM (Non-Volatile SRAM)
NVSRAM
5.5 V
4.5 V
-40 ¯C
85 C
70 ns
Non-Volatile
Surface Mount
70 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 58.30<4d
11$ 53.64
33$ 51.55
55$ 50.59
110$ 49.31

Description

General part information

DS1245Y Series

The DS1245 1024k Nonvolatile (NV) SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is nconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.