JAN2N5662

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Microchip Technology

NPN SILICON POWER 200V TO 300V, 5A

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Documents2N5660 2N5661 2N5662 2N5663

Discrete Semiconductor Products

JAN2N5662

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Microchip Technology

NPN SILICON POWER 200V TO 300V, 5A

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Documents2N5660 2N5661 2N5662 2N5663

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N5662

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Power - Max [Max]	1 W
Supplier Device Package	TO-5
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

JANTX2N5662-Transistor Series

MIL-PRF-19500/454 This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454.

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Grade
Microchip Technology 2N5662	40	Through Hole	200 nA	NPN	200 V	TO-205AA TO-5-3 Metal Can	2 A	TO-5	1 W	800 mV
Microchip Technology JAN2N5662	40	Through Hole	200 nA	NPN	200 V	TO-205AA TO-5-3 Metal Can	2 A	TO-5	1 W	800 mV	Military
Microchip Technology JANTX2N5662	40	Through Hole	200 nA	NPN	200 V	TO-205AA TO-5-3 Metal Can	2 A	TO-5	1 W	800 mV	Military

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Microchip Direct	N/A	1	$ 138.68

Description

General part information

JANTX2N5662-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. The device packages for the encapsulated device types are as follows: (2N5660 and 2N5661) (similar to TO-66). The device packages for the encapsulated device types are as follows: (2N5662 and 2N5663) (similar to TO-5). The surfacemount device packages for the encapsulated device types are as follows: (2N5660U3, and 2N5661U3) in accordance with SMD 0.5 (U3).

Documents

Technical documentation and resources

2N5660 2N5661 2N5662 2N5663

Data Sheets