Discrete Semiconductor Products

APT26M100JCU2

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PM-MOSFET-8-SBD-SOT227 ISOTOP SOT-227 (J) TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

PM-MOSFET-8-SBD-SOT227 ISOTOP SOT-227 (J) TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT26M100JCU2

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	305 nC
Input Capacitance (Ciss) (Max) @ Vds	7868 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	543 W
Rds On (Max) @ Id, Vgs	396 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

1000V/Boost chopper/Si Mosfet modules

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case
Microchip Technology APT26M100JCU2	MOSFET (Metal Oxide)	7868 pF	150 °C	-40 °C	26 A	1000 V	SOT-227	Chassis Mount	30 V	5 V	305 nC	N-Channel	10 V	396 mOhm	543 W	SOT-227-4 miniBLOC
Microchip Technology APT26M100JCU3	MOSFET (Metal Oxide)	7868 pF	150 °C	-40 °C	26 A	1000 V	SOT-227	Chassis Mount	30 V	5 V	305 nC	N-Channel	10 V	396 mOhm	543 W	SOT-227-4 miniBLOC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* MOSFETs

* Low RDSon

* Low input and Miller capacitance

Technical documentation and resources