Discrete Semiconductor Products

PHK4NQ20T,518

Obsolete

MOSFET N-CH 200V 4A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 4A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	PHK4NQ20T,518

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	26 nC
Input Capacitance (Ciss) (Max)	1230 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	6.25 W
Rds On (Max)	130 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Package Length	Package Width	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Power Dissipation (Max)	Vgs(th) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Drain to Source Voltage (Vdss)
NXP USA Inc. PHK4NQ20T,518	26 nC	8-SO 8-SOIC	1230 pF	10 V	5 V	20 V	0.154 in	3.9 mm	Surface Mount	-55 °C	150 °C	N-Channel	6.25 W	4 V	130 mOhm	4 A	MOSFET (Metal Oxide)	200 V
NXP USA Inc. PHK4NQ10T,518	22 nC	8-SO 8-SOIC	880 pF	10 V	4.5 V	20 V	0.154 in	3.9 mm	Surface Mount	-65 °C	150 °C	N-Channel	2.5 W	4 V	70 mOhm		MOSFET (Metal Oxide)	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.82	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 4A (Tc) 6.25W (Tc) Surface Mount 8-SO

Technical documentation and resources