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8 SOIC
Discrete Semiconductor Products

PHK4NQ20T,518

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 200V 4A 8SO

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8 SOIC
Discrete Semiconductor Products

PHK4NQ20T,518

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 200V 4A 8SO

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPHK4NQ20T,518
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds1230 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)6.25 W
Rds On (Max) @ Id, Vgs130 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

PHK4N Series

N-Channel 200 V 4A (Tc) 6.25W (Tc) Surface Mount 8-SO

Documents

Technical documentation and resources