PHK4N Series

Catalog

MOSFET N-CH 200V 4A 8SO

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PHK4NQ20T,518	1230 pF	20 V	4 A	-55 °C	150 °C	130 mOhm	200 V	MOSFET (Metal Oxide)	6.25 W	Surface Mount	26 nC	8-SOIC	3.9 mm	0.154 in	10 V	5 V	N-Channel	8-SO
Freescale Semiconductor - NXP PHK4NQ10T,518		20 V		-65 °C	150 °C	70 mOhm	100 V	MOSFET (Metal Oxide)	2.5 W	Surface Mount	22 nC	8-SOIC	3.9 mm	0.154 in			N-Channel	8-SO	880 pF	4.5 V 10 V