PHK4N Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 200V 4A 8SO
| Part | Gate Charge (Max) | Package Name | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Package Length | Package Width | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Power Dissipation (Max) | Vgs(th) (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 26 nC | 8-SO 8-SOIC | 1230 pF | 10 V | 5 V | 20 V | 0.154 in | 3.9 mm | Surface Mount | -55 °C | 150 °C | N-Channel | 6.25 W | 4 V | 130 mOhm | 4 A | MOSFET (Metal Oxide) | 200 V |
NXP USA Inc. | 22 nC | 8-SO 8-SOIC | 880 pF | 10 V | 4.5 V | 20 V | 0.154 in | 3.9 mm | Surface Mount | -65 °C | 150 °C | N-Channel | 2.5 W | 4 V | 70 mOhm | MOSFET (Metal Oxide) | 100 V |