Discrete Semiconductor Products

SQJ488EP-T1_BE3

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MOSFET N-CH 100V 42A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 100V 42A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ488EP-T1_BE3

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	978 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Grade	Vgs (Max)	Qualification	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Vishay General Semiconductor - Diodes Division SQJ488EP-T1_BE3	978 pF	27 nC	2.5 V	N-Channel	21 mOhm	42 A	Surface Mount	100 V	MOSFET (Metal Oxide)	Automotive	20 V	AEC-Q101	PowerPAK® SO-8	83 W	-55 °C	175 ░C	4.5 V 10 V	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SQJ488EP-T2_BE3	978 pF	27 nC	2.5 V	N-Channel	21 mOhm	42 A	Surface Mount	100 V	MOSFET (Metal Oxide)	Automotive	20 V	AEC-Q101	PowerPAK® SO-8	83 W	-55 °C	175 ░C	4.5 V 10 V	PowerPAK® SO-8

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General part information

N-Channel 100 V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources